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Developing content for " Nanometer CMOS ICs: From Basics to ASICs " requires covering the entire development chain, from fundamental physics to system-level application . Based on standard industry courseware and modern textbook structures, the content should be organized into the following core areas: 1. Fundamental Principles & Device Physics

: Evolution from legacy 5-mask processes to modern FinFET , Nanosheet , and Gate-All-Around (GAA) architectures.

: Impact of geometrical, physical, and field-scaling on transistor behavior.

: State-of-the-art tools and techniques, including EUV (Extreme Ultraviolet) and multi-patterning.

: Detailed review of MOS transistor physics, current-voltage ( ) characteristics, and capacitance.